Buffer Transport Mechanisms in Intentionally Carbon Doped GaN Heterojunction Field Effect Transistors

Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors

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Degradation Mechanisms for GaN and GaAs High Speed Transistors

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field ...

Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs

p s s current topics in solid state physics c status solidi 1 Introduction AlGaN/GaN high electron mobility transistor (HEMT) technology is rapidly advancing into the 100-200 GHz operation regime with the scaling of gate length, and the reduction of parasitic elements. Scaling of vertical het-erostructure dimensions is needed to support further improvements in HEMT performance. Therefore, ultra...

Delta-doped AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with high breakdown voltages

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...